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  • image of Single FETs, MOSFETs>IV1Q12050T4
  • image of Single FETs, MOSFETs>IV1Q12050T4
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IV1Q12050T4
Single FETs, MOSFETs
Inventchip Technology
SIC MOSFET, 1200V 50MOHM, TO-247
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image of Single FETs, MOSFETs>IV1Q12050T4
IV1Q12050T4
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
IV1Q12050T4
Single FETs, MOSFETs
Inventchip Technology
SIC MOSFET, 120
Single FETs, MOSFETs
Tube
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrInventchip Technology
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Rds On (Max) @ Id, Vgs65mOhm @ 20A, 20V
Power Dissipation (Max)344W (Tc)
Vgs(th) (Max) @ Id3.2V @ 6mA
Supplier Device PackageTO-247-4
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+20V, -5V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds2750 pF @ 800 V
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