IMBG65R015M2HXTMA1 Single FETs, MOSFETs_Shenzhen Penghe Technology Co., Ltd. _ Electronic components IC genuine stock hot selling

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

IMBG65R015M2HXTMA1

Single FETs, MOSFETs

IR (Infineon Technologies)

SILICON CARBIDE MOSFET

Tape & Reel (TR)

Price:

$15.8180

Total number

Quantity

Price

Total price

$23.4850

$21.6590

$216.5900

$20.6910

$517.2750

100

$18.5020

$1,850.2000

250

$17.6440

$4,411.0000

500

$16.7970

$8,398.5000

1000

$15.8180

$15,818.0000

Obtain quotation information

product details

IMBG65R015M2HXTMA1

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

IMBG65R015M2HXTMA1

Single FETs, MOSFETs

IR (Infineon Technologies)

SILICON CARBIDE

Single FETs, MOSFETs

Tape & Reel (TR)

Specification sheet

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	CoolSiC™ Gen 2
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	SiCFET (Silicon Carbide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	115A (Tc)
Rds On (Max) @ Id, Vgs	18mOhm @ 64.2A, 18V
Power Dissipation (Max)	416W (Tc)
Vgs(th) (Max) @ Id	5.6V @ 13mA
Supplier Device Package	PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On)	15V, 20V
Vgs (Max)	+23V, -7V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	2792 pF @ 400 V

Online service

Online service

Online service