G60N04K Single FETs, MOSFETs_Shenzhen Penghe Technology Co., Ltd. _ Electronic components IC genuine stock hot selling

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

G60N04K

Single FETs, MOSFETs

Goford Semiconductor

N40V,RD(MAX)<7M@10V,RD(MAX)<12M@

Tape & Reel (TR)

2532

Price:

$0.7920

inventory: 2532

Total number

Quantity

Price

Total price

$0.7920

$0.6820

$6.8200

100

$0.4730

$47.3000

500

$0.3960

$198.0000

1000

$0.3410

$341.0000

2500

$0.2970

$742.5000

5000

$0.2860

$1,430.0000

12500

$0.2640

$3,300.0000

25000

$0.2640

$6,600.0000

Obtain quotation information

product details

G60N04K

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

G60N04K

Single FETs, MOSFETs

Goford Semiconductor

N40V,RD(MAX)<7M

Single FETs, MOSFETs

Tape & Reel (TR)

2532

Specification sheet

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Goford Semiconductor
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Rds On (Max) @ Id, Vgs	7mOhm @ 30A, 10V
Power Dissipation (Max)	65W (Tc)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 20 V

Online service

Online service

Online service