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  • image of Single FETs, MOSFETs>IRF200B211XKMA1
  • image of Single FETs, MOSFETs>IRF200B211XKMA1
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
IRF200B211XKMA1
Single FETs, MOSFETs
IR (Infineon Technologies)
TRENCH >=100V
-
Tube
0
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$0.6930
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$0.6930

$2,079.0000

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image of Single FETs, MOSFETs>IRF200B211XKMA1
image of Single FETs, MOSFETs>IRF200B211XKMA1
IRF200B211XKMA1
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
IRF200B211XKMA1
Single FETs, MOSFETs
IR (Infineon Technologies)
TRENCH >=100V
Single FETs, MOSFETs
Tube
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrIR (Infineon Technologies)
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs170mOhm @ 7.2A, 10V
Power Dissipation (Max)80W (Tc)
Vgs(th) (Max) @ Id4.9V @ 50µA
Supplier Device PackagePG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds790 pF @ 50 V
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