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  • image of FET, MOSFET Arrays>NXH004P120M3F2PTNG
  • image of FET, MOSFET Arrays>NXH004P120M3F2PTNG
  • image of FET, MOSFET Arrays>NXH004P120M3F2PTNG
Part number
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Type
Encapsulation
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Quantity
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NXH004P120M3F2PTNG
FET, MOSFET Arrays
Sanyo Semiconductor/onsemi
SILICON CARBIDE (SIC) MODULE EL
-
Tray
0
Price:
$222.0240
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Quantity

Price

Total price

1

$237.0390

$237.0390

20

$222.0240

$4,440.4800

40

$213.6750

$8,547.0000

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product details
image of FET, MOSFET Arrays>NXH004P120M3F2PTNG
image of FET, MOSFET Arrays>NXH004P120M3F2PTNG
NXH004P120M3F2PTNG
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
NXH004P120M3F2PTNG
FET, MOSFET Arrays
Sanyo Semiconductor/onsemi
SILICON CARBIDE
FET, MOSFET Arrays
Tray
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTray
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 175°C (TJ)
TechnologySilicon Carbide (SiC)
Power - Max1.1kW (Tj)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C338A (Tj)
Input Capacitance (Ciss) (Max) @ Vds16410pF @ 800V
Rds On (Max) @ Id, Vgs5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs876nC @ 20V
Vgs(th) (Max) @ Id4.4V @ 120mA
Supplier Device Package36-PIM (56.7x62.8)
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