0755-89587716
  • image of 存储器>GD25Q16EEIGR
  • image of 存储器>GD25Q16EEIGR
GD25Q16EEIGR
Memory
GigaDevice Semiconductor (HK) Limited
16MBIT NOR FLAS
-
Tape & Reel (TR) Cut Tape (CT)
-
image of 存储器>GD25Q16EEIGR
image of 存储器>GD25Q16EEIGR
GD25Q16EEIGR
GD25Q16EEIGR
Memory
GigaDevice Semiconductor (HK) Limited
16MBIT NOR FLAS
-
Tape & Reel (TR) Cut Tape (CT)
-
TYPEDESCRIPTION
MfrGigaDevice Semiconductor (HK) Limited
Series-
PackageTape & Reel (TR)
Part StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NOR
Memory Size16Mb (2M x 8)
Memory InterfaceSPI - Quad I/O
Clock Frequency133 MHz
Write Cycle Time - Word, Page70µs, 2ms
Access Time7 ns
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case8-XFDFN Exposed Pad
Supplier Device Package8-USON (2x3)
Base Product NumberGD25Q16
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